| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BZW04-53B | Glass Passivated Junction Transient Voltage Suppressor | General-Semiconductor | - | - | - | - | 55 K |
| HA-5320 | Microsecond Precision Sample and Hold Amplifier Amplifier | Intersil-Corporation | - | - | - | - | 85 K |
| HA-5320/883 | High Speed Precision Sample and Hold Amplifier | Intersil-Corporation | - | - | - | - | 90 K |
| HA-5340 | 700ns, Low Distortion, Precision Sample and Hold Amplifier FN2859.3 | Intersil-Corporation | - | - | - | - | 399 K |
| HI-539 | Precision, 4-Channel, Low-Level, Differential Multiplexer | Intersil-Corporation | - | - | - | - | 189 K |
| MSM5718C50-53GS-K | 18Mb(2Mx9) concurrent RDRAM | distributor | SHP | 32 | -55°C | 125°C | 549 K |
| UPD488448FB-C60-53-DQ1 | 128M-bit(256K-word x 16-bit x 32-bank)Direct Rambus(TM) DRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| UPD488448FB-C60-53-DQ2 | 128M-bit(256K-word x 16-bit x 32-bank)Direct Rambus(TM) DRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| UPD488448FF-C60-53-DQ1 | 128M-bit(256K-word x 16-bit x 32-bank)Direct Rambus(TM) DRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| UPD488448FF-C60-53-DQ2 | 128M-bit(256K-word x 16-bit x 32-bank)Direct Rambus(TM) DRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
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