| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FAR-M3DC-74M250-E100 | Piezoelectric voltage controlled oscillator (6 to 30 MHz) | Fujitsu-Microelectronis | DIP | 8 | -10°C | 70°C | 72 K |
| MC-4R96CEE6B-745 | 96M-byte(48M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) Module | NEC-Electronics-Inc- | - | - | - | - | 127 K |
| MC-4R96CEE6C-745 | 96M-byte(48M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) Module | NEC-Electronics-Inc- | - | - | - | - | 127 K |
| MC-4R96CPE6C-745 | 96M-byte(48M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) Module | NEC-Electronics-Inc- | - | - | - | - | 131 K |
| MC-4R96CPE6C-745 | 96M-byte(48M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) Module | NEC-Electronics-Inc- | - | - | - | - | 131 K |
| SGA-7489 | DC-3000 MHz 5V silicon germanium HBT cascdeable gain block. High output intercept; +36 dBm typ. at 850 MHz. | distributor | - | 4 | -40°C | 85°C | 521 K |
| SMI-74-100 | SMD power inductor | distributor | - | - | - | - | 230 K |
| SMI-74-120 | SMD power inductor | distributor | - | - | - | - | 230 K |
| SMI-74-150 | SMD power inductor | distributor | - | - | - | - | 230 K |
| SMI-74-180 | SMD power inductor | distributor | - | - | - | - | 230 K |
| [1] 2 [3] [4] [5] [6] |
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