Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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VLB10-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
VLB10-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
VLB40-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
VLB40-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
VLB70-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
VLB70-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
VMB10-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
VMB10-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
VMB100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
VMB40-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
[1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
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