| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AT28C010-12DM/883 | 1 Megabit (128K x 8) paged CMOS EPROM | ATMEL-Corporation | cer DIP | 32 | -55°C | 125°C | 657 K |
| AT28C010-12EM/883 | 1 Megabit (128K x 8) paged CMOS EPROM | ATMEL-Corporation | LCC | 32 | -55°C | 125°C | 657 K |
| AT28C010-12FM/883 | 1 Megabit (128K x 8) paged CMOS EPROM | ATMEL-Corporation | Flatpack | 32 | -55°C | 125°C | 657 K |
| AT28C010-12LM/883 | 1 Megabit (128K x 8) paged CMOS EPROM | ATMEL-Corporation | LCC | 44 | -55°C | 125°C | 657 K |
| MD56V62400-12TA | 4-bank x 4,194,304-word x 4-bit synchronous dynamic RAM | distributor | TSOP | 54 | 0°C | 70°C | 303 K |
| MS81V06160-12TA | (401,408-word x 16-bit) FIFO memory | distributor | TSOP | 70 | 0°C | 70°C | 266 K |
| MS81V10160-12TA | (664,320-word x 16-bit) FIFO memory | distributor | TSOP | 70 | 0°C | 70°C | 266 K |
| VMB40-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| VMB70-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VMB70-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
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