| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| JM38510/30007B2A | DUAL 4-INPUT POSITIVE-NAND GATES | Texas-Instruments | FK | 20 | -55°C | 125°C | 247 K |
| JM38510/30007BCA | DUAL 4-INPUT POSITIVE-NAND GATES | Texas-Instruments | J | 14 | -55°C | 125°C | 247 K |
| JM38510/30007BDA | DUAL 4-INPUT POSITIVE-NAND GATES | Texas-Instruments | W | 14 | -55°C | 125°C | 247 K |
| JM38510/30007SD | Dual 4-Input NAND Gate | distributor | Cerpack | 14 | - | - | 124 K |
| MJ10007 | Switchmode series NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 190 K |
| MJ10007 | NPN silicon power darlington transistor | Motorola | - | 2 | -65°C | 200°C | 228 K |
| MJ10007 | SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode | ON-Semiconductor | - | 2 | - | - | 228 K |
| PTB20007 | 30 watts, 935-960 MHz cellular radio RF power transistor | Ericsson-Microelectronics | 20200 | 6 | - | - | 47 K |
| PTF10007 | 35 watts, 1.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20222 | 4 | - | - | 235 K |
| VT5F9MN0007 | RF regulator | Sharp | - | 6 | - | - | 54 K |
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