| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AT10-0009 | 800-1000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 236 K |
| AT10-0009-TB | 800-1000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 236 K |
| AT10-0009TR | 800-1000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 236 K |
| AT10-0009TR | 800-1000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 236 K |
| CH35-0009-S | 10-500 MHz, 11 dB directional coupler | M-A-COM---manufacturer-of-RF | FP | 8 | -45°C | 85°C | 15 K |
| MJ10009 | 700 V, NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 196 K |
| MJ10009 | 20A Switchmode series NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 189 K |
| MJ10009 | NPN silicon transistor. Switching regulators. PWM inverters. Solenoid and relay drivers. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 21 K |
| PTB20009 | 2.5 watts, 935-960 MHz cellular radio RF power transistor | Ericsson-Microelectronics | 20206 | 4 | - | - | 39 K |
| PTF10009 | 85 watts, 1.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20230 | 6 | - | - | 228 K |
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