Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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EH10012Z1 | 3 Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 80 K |
IRKD60012 | Standard diode | International-Rectifier | SMAP | 3 | -40°C | 150°C | 113 K |
IRKH50012 | Thyristor/diode and thyristor/thyristor | International-Rectifier | SMAP | 3 | -40°C | 130°C | 134 K |
IRKL50012 | Thyristor/diode and thyristor/thyristor | International-Rectifier | SMAP | 3 | -40°C | 130°C | 134 K |
IRKT50012 | Thyristor/diode and thyristor/thyristor | International-Rectifier | SMAP | 3 | -40°C | 130°C | 134 K |
MJ10012 | 10A NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 176 K |
MJ10012 | NPN silicon power darlington transistor | Motorola | - | 2 | -65°C | 200°C | 191 K |
RURU100120 | 100A, 1200V Ultrafast Diode | Intersil-Corporation | - | - | - | - | 42 K |
SDM30012 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | SEE_FACTORY | - | - | - | 110 K |
TDM30012 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | SEE_FACTORY | - | - | - | 120 K |
[1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
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