| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AT10-0017 | 1700-2000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 220 K |
| AT10-0017-TB | 1700-2000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 220 K |
| AT10-0017TR | 1700-2000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 220 K |
| MAAMSS0017TR | 50-450 MHz, broadband IF driver amplifier | M-A-COM---manufacturer-of-RF | SOT | 4 | - | - | 131 K |
| MAAMSS0017TR3000 | 50-450 MHz, broadband IF driver amplifier | M-A-COM---manufacturer-of-RF | SOT | 4 | - | - | 131 K |
| MASWSS0017-XFLT1 | 0.5-2.2 GHz, 2 V dual-mode WCDMA and triple band GSM/DCS/PCS switch | M-A-COM---manufacturer-of-RF | - | 20 | - | - | 51 K |
| MASWSS0017-XFLT3 | 0.5-2.2 GHz, 2 V dual-mode WCDMA and triple band GSM/DCS/PCS switch | M-A-COM---manufacturer-of-RF | - | 20 | - | - | 51 K |
| MD20-0017-S | 10-3000 MHz, Double balanced mixer | M-A-COM---manufacturer-of-RF | FP | 8 | -40°C | 85°C | 16 K |
| OH10017 | GaAs hall element | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 25 K |
| PTB20017 | 150 watts, 860-900 MHz cellular radio RF power transistor | Ericsson-Microelectronics | 20224 | 4 | - | - | 44 K |
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