| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1001C | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 33 K |
| HER3001C | High efficiency rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward recttified current 30.0A at 75degreC. | distributor | - | 3 | -65°C | 150°C | 26 K |
| MAS7001CL | Radiation hard 512 x 9 bit FIFO | distributor | CDIL | 28 | -55°C | 125°C | 144 K |
| MT5C1001C-20L/IT | 1 meg x 4 SRAM memory array | distributor | DIP | 28 | -40°C | 85°C | 166 K |
| MT5C1001C-20L/XT | 1 meg x 4 SRAM memory array | distributor | DIP | 28 | -55°C | 125°C | 166 K |
| MT5C1001C-25L/IT | 1 meg x 4 SRAM memory array | distributor | DIP | 28 | -40°C | 85°C | 166 K |
| MT5C1001C-35L/IT | 1 meg x 4 SRAM memory array | distributor | DIP | 28 | -40°C | 85°C | 166 K |
| MT5C1001C-40L/IT | 1 meg x 4 SRAM memory array | distributor | DIP | 28 | -40°C | 85°C | 166 K |
| MT5C1001C-55L/IT | 1 meg x 4 SRAM memory array | distributor | DIP | 28 | -40°C | 85°C | 166 K |
| MT5C1001C-70L/IT | 1 meg x 4 SRAM memory array | distributor | DIP | 28 | -40°C | 85°C | 166 K |
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