| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AT001D6-25 | GaAs IC 4 bit digital attenuator 3 dB LSB DC-1 GHz | distributor | SOIC | 16 | -40°C | 85°C | 28 K |
| BS62LV2001DC | 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 256K x 8bit | distributor | DICE | 32 | 0°C | 70°C | 283 K |
| BS62LV2001DI | 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 256K x 8bit | distributor | DICE | 32 | -40°C | 85°C | 283 K |
| BS62LV4001DC | 70/100ns 20-45mA 2.4-5.5V low power/voltage CMOS SRAM 512K x 8bit | distributor | DICE | 32 | 0°C | 70°C | 341 K |
| BS62LV4001DI | 70/100ns 20-45mA 2.4-5.5V low power/voltage CMOS SRAM 512K x 8bit | distributor | DICE | 32 | -40°C | 85°C | 341 K |
| DES9157001DGAZ | 6.5V; 345mW; 3.3GHz + 8fixed modulus divider | distributor | SMD | 8 | - | - | 93 K |
| MT5C1001DCJ-20L/883C | 1 meg x 4 SRAM memory array | distributor | SOJ | 32 | -55°C | 125°C | 166 K |
| MT5C1001DCJ-25L/883C | 1 meg x 4 SRAM memory array | distributor | SOJ | 32 | -55°C | 125°C | 166 K |
| MT5C1001DCJ-35L/883C | 1 meg x 4 SRAM memory array | distributor | SOJ | 32 | -55°C | 125°C | 166 K |
| RBV1001D | 100 V, 10 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 41 K |
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