Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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M5M51008CFP-55X | 1048576-bit (131072-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 32 | 0°C | 70°C | 87 K |
M5M51008CFP-70H | 1048576-bit (131072-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 32 | 0°C | 70°C | 87 K |
M5M51008CFP-70X | 1048576-bit (131072-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 32 | 0°C | 70°C | 87 K |
M5M51008CP-55H | 1048576-bit (131072-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 32 | 0°C | 70°C | 87 K |
M5M51008CP-55X | 1048576-bit (131072-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 32 | 0°C | 70°C | 87 K |
M5M51008CP-70H | 1048576-bit (131072-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 32 | 0°C | 70°C | 87 K |
M5M51008CP-70X | 1048576-bit (131072-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 32 | 0°C | 70°C | 87 K |
TE28F008C3B110 | 3 volt advanced + boot block flash memory 8 Mbit. Access speed 110 ns | Intel-Corporation | TSOP | 40 | -40°C | 85°C | 384 K |
TE28F008C3B90 | 3 volt advanced + boot block flash memory 8 Mbit. Access speed 90 ns | Intel-Corporation | TSOP | 40 | -40°C | 85°C | 384 K |
TE28F008C3T110 | 3 volt advanced + boot block flash memory 8 Mbit. Access speed 110 ns | Intel-Corporation | TSOP | 40 | -40°C | 85°C | 384 K |
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