| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K6T1008C2E-DB55 | 128Kx8 bit, 55ns low low power CMOS static RAM | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 190 K |
| K6T1008C2E-DB70 | 128Kx8 bit, 70ns low low power CMOS static RAM | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 190 K |
| K6T1008C2E-DL55 | 128Kx8 bit, 55ns low power CMOS static RAM | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 190 K |
| K6T1008C2E-DL70 | 128Kx8 bit, 70ns low power CMOS static RAM | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 190 K |
| K6T1008C2E-GB55 | 128Kx8 bit, 55ns low low power CMOS static RAM | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 190 K |
| K6T1008C2E-GB70 | 128Kx8 bit, 70ns low low power CMOS static RAM | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 190 K |
| K6T1008C2E-GL55 | 128Kx8 bit, 55ns low power CMOS static RAM | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 190 K |
| K6T1008C2E-GL70 | 128Kx8 bit, 70ns low power CMOS static RAM | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 190 K |
| K6T1008C2E-TB55 | 128Kx8 bit, 55ns low low power CMOS static RAM | Samsung-Electronic | TSOP | 32 | 0°C | 70°C | 190 K |
| M5M5V008CKR-70HI | 1048576-bit (131072-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 32 | 0°C | 70°C | 87 K |
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