| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KS88C01116 | 8-bit single-chip CMOS microcontroller. | Samsung-Electronic | - | 24 | -40°C | 85°C | 117 K |
| KS88C01116 | 8-bit single-chip CMOS microcontroller. | Samsung-Electronic | - | 24 | -40°C | 85°C | 117 K |
| MC10111L | Dual 3-input/3-output NOR gate | Motorola | DIP | 16 | - | - | 78 K |
| MLS9037-00111 | 109-111 MHz, Surface mount frequency synthesizer IF | M-A-COM---manufacturer-of-RF | SMT | 12 | -40°C | 85°C | 80 K |
| MLS9037-00111TR | 109-111 MHz, Surface mount frequency synthesizer IF | M-A-COM---manufacturer-of-RF | SMT | 12 | -40°C | 85°C | 80 K |
| MLX90111 | 128-bit read write transponder | distributor | Bare die in blistert | 7 | -40°C | 85°C | 176 K |
| MLX90111 | 128-bit read write transponder | distributor | Sawed wafer on frame | 7 | -40°C | 85°C | 176 K |
| MLX90111 | 128-bit read write transponder | distributor | SOIC | 8 | -40°C | 85°C | 176 K |
| PTB20111 | 85 watts, 860-900 MHz cellular radio RF power transistor | Ericsson-Microelectronics | 20216 | 3 | - | - | 47 K |
| PTF10111 | 6 watts, 1.5 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20222 | 3 | - | - | 337 K |
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