| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| APT6011B2VFR | 600V, 49A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 34 K |
| APT6011B2VR | 600V, 49A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 39 K |
| BS616LV4011BC | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit | distributor | BGA | 48 | 0°C | 70°C | 231 K |
| BS616LV4011BI | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit | distributor | BGA | 48 | -40°C | 85°C | 231 K |
| BS616UV8011BI | 70/100ns 15-20mA 1.8-2.3V ultra low power/voltage CMOS SRAM 512K x 16bit | distributor | BGA | 48 | -40°C | 85°C | 221 K |
| MC14011BCL | Quad 2-input NAND gate | Motorola | DIP | 14 | -55°C | 125°C | 327 K |
| MC14011BCP | Quad 2-input NAND gate | Motorola | PDIP | 14 | -55°C | 125°C | 327 K |
| MC14011BD | Quad 2-input NAND gate | Motorola | SOIC | 14 | -55°C | 125°C | 327 K |
| SL4011BD | Quad 2-input NAND gate. High-voltage silicon-gate CMOS. | distributor | SOIC | 14 | -55°C | 125°C | 30 K |
| SL4011BN | Quad 2-input NAND gate. High-voltage silicon-gate CMOS. | distributor | DIP | 14 | -55°C | 125°C | 30 K |
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