| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ACT-PS512K8W-012L2I | High speed 4 Megabit plastic monolithic SRAM. Options burn-in. Speed 12ns. | distributor | SOJ | 36 | -40°C | 85°C | 73 K |
| CEB1012L | N-channel enhancement mode field transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 497 K |
| CEP1012L | N-channel enhancement mode field transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 497 K |
| GMS81C2012LQ | CMOS single-chip 8-bit microcontroller with A/D converter & VED driver. ROM size 12K bytes. RAM size 448 bytes. Mask version. | distributor | LQFP | 64 | -40°C | 85°C | 1 M |
| GMS81C2012LQ | ROM/RAM size:12 Kb/448 bytes,2.7-5.5 V, 1-4.5 MHz, CMOS single-chip 8-bit microcontroller | distributor | LQFP | 64 | -40°C | 85°C | 1 M |
| Q8012LH5 | 800 V, 12 A alternistor triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| QK012LH5 | 1000 V, 12 A alternistor triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| SG2012L | Driver - Medium Current Array | Microsemi-Corporation | LCC | - | - | - | 98 K |
| SG2012L/883B | Driver - Medium Current Array | Microsemi-Corporation | LCC | - | - | - | 98 K |
| VN4012L | 400V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 441 K |
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