Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BQ4016MC-70 | 1024KX8 NONVOLATILE SRAM | Texas-Instruments | - | - | - | - | 858 K |
CD74HC4016M96 | HIGH SPEED CMOS LOGIC QUAD BILATERAL SWITCHES | Texas-Instruments | D | 14 | -55°C | 125°C | 58 K |
HB288016MM1 | MultiMediaCard 16 MByte | distributor | - | 7 | -25°C | 85°C | 233 K |
MX29F016MC-12 | Access time: 120ns; 16M-bit (2M x 8) CMOS equal sector flash memory | distributor | SOP | 44 | 0°C | 70°C | 848 K |
MX29F016MI-12 | Access time: 120ns; 16M-bit (2M x 8) CMOS equal sector flash memory | distributor | SOP | 44 | -40°C | 85°C | 848 K |
MXL1016MJ8 | Ultra-fast precision TTL comparator. 10ns typ high-speed. | Maxim-Integrated-Producs | CERDIP | 8 | -55°C | 125°C | 41 K |
MXL1016MJ8 | Ultra-fast precision TTL comparator. 10ns typ high-speed. | Maxim-Integrated-Producs | CERDIP | 8 | -55°C | 125°C | 41 K |
NJU7016M | Low-power dual C-MOS operational amplifier | New-Japan-Radio-Co--Ltd--JRC | DMP | 8 | -40°C | 85°C | 264 K |
PACDN016M | 6 channel ESD protection array with zener supply clamp | California-Micro-Devices | MSOP | 8 | -20°C | 85°C | 134 K |
SGM2016M | GaAs N-channel Dual-Gate MES FET | Sony-Semiconductor | - | - | - | - | 112 K |
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