| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BS616LV2025DI | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | distributor | DICE | 48 | -40°C | 85°C | 253 K |
| BS616LV4025DC | 70/55ns 45mA 4.5-5.5V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | distributor | DICE | 48 | 0°C | 70°C | 190 K |
| BS616LV4025DI | 70/55ns 45mA 4.5-5.5V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | distributor | DICE | 48 | -40°C | 85°C | 190 K |
| BS62LV1025DC | 55/70ns 35mA 4.5-5.5V very low power/voltage CMOS SRAM 128K x 8bit | distributor | DICE | 32 | 0°C | 70°C | 382 K |
| BS62LV1025DI | 55/70ns 35mA 4.5-5.5V very low power/voltage CMOS SRAM 128K x 8bit | distributor | DICE | 32 | -40°C | 85°C | 382 K |
| KTC2025D | General Purpose Transistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 399 K |
| PBYR1025D | Rectifier diode. Schottky barrier. | Philips-Semiconductors | SOT428 | 3 | 0°C | 150°C | 52 K |
| SA7025DK | 1GHz low-voltage fractional-N synthesizer. | Philips-Semiconductors | - | 20 | -40°C | 85°C | 306 K |
| SA7025DK | 1GHz low-voltage fractional-N synthesizer. | Philips-Semiconductors | SSOP | 20 | -40°C | 85°C | 306 K |
| [1] [2] 3 |
|---|
