| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AD605AN | 6.5V; 1.2-1.4W; dual, low-noise, single-supply variable gain amplifier. For ultrasound and sonar time-gain control, high performance AGC systems | Analog-Devices | DIP | 16 | -40°C | 85°C | 198 K |
| AD8005AN | 12.6V; 270MHz, current feedback amplifier. For signal conditioning, A/D bufer, power-sensitive, high-speed systems | Analog-Devices | DIP | 8 | -40°C | 85°C | 193 K |
| ADM705AN | 0.3-6V; low cost supervisory circuit. For microprocessor systems | Analog-Devices | DIP | 8 | -40°C | 85°C | 150 K |
| NE5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | DIP | 8 | 0°C | 70°C | 190 K |
| NE5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | - | 8 | 0°C | 70°C | 190 K |
| SA5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | DIP | 8 | -40°C | 85°C | 190 K |
| SA5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | DIP | 8 | -40°C | 85°C | 190 K |
| SA5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | - | 8 | -40°C | 85°C | 190 K |
| SE5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | - | 8 | -55°C | 125°C | 190 K |
| SE5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | DIP | 8 | -55°C | 125°C | 190 K |
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