| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| JM38510/08101BCA | DUAL 4-INPUT POSITIVE-NAND 50-OHM LINE DRIVERS | Texas-Instruments | J | 14 | -55°C | 125°C | 104 K |
| JM38510/08101BCA | DUAL 4-INPUT POSITIVE-NAND 50-OHM LINE DRIVERS | Texas-Instruments | J | 14 | -55°C | 125°C | 104 K |
| JM38510/08101BDA | DUAL 4-INPUT POSITIVE-NAND 50-OHM LINE DRIVERS | Texas-Instruments | W | 14 | -55°C | 125°C | 104 K |
| MH0810 | 5V complementary epitaxial transistor 3-5W AF output | distributor | - | 3 | - | - | 170 K |
| PF08103A | Power MOSFET RF amplifier module | distributor | - | - | - | - | 42 K |
| PF08103B | Power MOSFET RF amplifier module | distributor | - | - | - | - | 34 K |
| PH0810-15 | 850-960 MHz, 15 W, wireless power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 30 K |
| PH0810-35 | 850-960 MHz, 35 W, wireless power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 206 K |
| S-80810ALNP-E50-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -20°C | 70°C | 1 M |
| S-80810ANNP-E70-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -20°C | 70°C | 1 M |
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