| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4E160812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
| K4E160812D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 257 K |
| K4E170812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
| K4E170812D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 257 K |
| K4F160812D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 226 K |
| K4F160812D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 226 K |
| K4F170812D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 226 K |
| K4F170812D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 226 K |
| Z86E0812SSC1924 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 3.0V to 5.5V | distributor | SOIC | 18 | 0°C | 70°C | 251 K |
| Z86E0812SSC1924 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 3.0V to 5.5V | distributor | SOIC | 18 | 0°C | 70°C | 251 K |
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