| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IDT70825S20G | High-speed 8K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | PGA | 84 | 0°C | 70°C | 319 K |
| IDT70825S25G | High-speed 8K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | PGA | 84 | 0°C | 70°C | 319 K |
| IDT70825S35G | High-speed 8K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | PGA | 84 | 0°C | 70°C | 319 K |
| IDT70825S35GB | High-speed 8K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | PGA | 84 | -55°C | 105°C | 319 K |
| IDT70825S45G | High-speed 8K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | PGA | 84 | 0°C | 70°C | 319 K |
| ND420825 | 800V, 250A general purpose scr/diode | distributor | - | - | - | - | 107 K |
| ND470825 | 800V, 250A general purpose diode/scr diode | distributor | - | - | - | - | 105 K |
| PS410825 | 800V, 2500A general purpose single diode | distributor | - | - | - | - | 91 K |
| S-80825ALNP-EAN-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| S-80825ANNP-EDN-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| [1] [2] 3 [4] |
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