| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CAT25C08U14-1.8TE13 | 8K SPI serial CMOS EEPROM 1.8-6.0V | distributor | TSSOP | 14 | 0°C | 70°C | 59 K |
| CAT25C08U14-TE13 | 2.5-6.0V 8K SPI serial CMOS EEPROM | distributor | TSSOP | 14 | 0°C | 70°C | 59 K |
| CAT25C08U14A-1.8TE13 | 8K SPI serial CMOS EEPROM 1.8-6.0V | distributor | TSSOP | 14 | -40°C | 105°C | 59 K |
| CAT25C08U14A-TE13 | 2.5-6.0V 8K SPI serial CMOS EEPROM | distributor | TSSOP | 14 | -40°C | 105°C | 59 K |
| CAT25C08U14I-1.8TE13 | 8K SPI serial CMOS EEPROM 1.8-6.0V | distributor | TSSOP | 14 | -40°C | 85°C | 59 K |
| CAT25C08U14I-TE13 | 2.5-6.0V 8K SPI serial CMOS EEPROM | distributor | TSSOP | 14 | -40°C | 85°C | 59 K |
| K6T4008U1C-MB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008U1C-MB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008U1C-TB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008U1C-TB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
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