Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MTB20N20E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 258 K |
MTP20N20E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 203 K |
R3130N20EA-TR | Low voltage detector with built-in delay circuit. Detector threshold 2.0V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
R3130N20EC-TR | Low voltage detector with built-in delay circuit. Detector threshold 2.0V. Standard output delay time 240ms. Output type CMOS. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
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