| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTP60N05HDL | HDTMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 166 K |
| OM60N05SA | 60V ultra low power MOSFET | distributor | - | 3 | -55°C | 150°C | 60 K |
| RFG50N05 | 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 47 K |
| RFG50N05L | 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 51 K |
| RFP50N05 | 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 47 K |
| RFP50N05L | 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 51 K |
| STP30N05 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 206 K |
| STP30N05FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 206 K |
| STP60N05-14 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
| STP80N05-09 | N-CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 114 K |
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