| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1MB10-120 | Fuji discrete package IGBT | distributor | - | 3 | - | - | 226 K |
| DS1010-125 | 10-Tap Silicon Delay Line | Dallas-Semiconductor | DIP | 14 | 0°C | 70°C | 60 K |
| ERW10-120 | Silicon diode | distributor | - | 2 | - | - | 145 K |
| HF10-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
| HF10-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VHB10-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VHB10-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| VLB10-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VLB10-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| W27E010-12 | 128K*8 bits high speed, low power electrically erasable EPROM | Winbond-Electronics | - | 32 | 0°C | 70°C | 194 K |
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|---|
