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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1MB10-120Fuji discrete package IGBTdistributor-3--226 K
DS1010-12510-Tap Silicon Delay LineDallas-SemiconductorDIP140°C70°C60 K
ERW10-120Silicon diodedistributor-2--145 K
HF10-12FNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C18 K
HF10-12SNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C17 K
VHB10-12FNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C17 K
VHB10-12SNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C16 K
VLB10-12FNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C17 K
VLB10-12SNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C16 K
W27E010-12128K*8 bits high speed, low power electrically erasable EPROMWinbond-Electronics-320°C70°C194 K
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