| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ESP100-12S | 100 Watt, output voltage 12V (8.6A), switching power supplier | distributor | SO | - | -10°C | 60°C | 329 K |
| HF100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| SMP100-120 | TRISIL | SGS-Thomson-Microelectronics | - | - | - | - | 80 K |
| SMP100-120 | TRISIL | SGS-Thomson-Microelectronics | - | - | - | - | 80 K |
| SXI100-12S | 100 Watt, output voltage 12V (8.4A) switching power supplie | distributor | SO | 8 | -10°C | 60°C | 545 K |
| TOL100-12 | 100 Watt, input voltage range: 85-264V, output voltage 12V (8.5A), open frame power supplier | distributor | SO | 5 | -10°C | 60°C | 288 K |
| TXL100-12S | 100 Watt, input voltage range: 88-264V, output voltage 12V (8.5A),switching power supplier | distributor | SO | - | 0°C | 70°C | 137 K |
| VHB100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 17 K |
| VLB100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
| VMB100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
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