| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1000GXHH22 | Silicon diffused type diode for high speed (fast recovery) rectifier applications | Toshiba | - | 2 | -40°C | 125°C | 101 K |
| HYM321000GS-50 | 1M x 32bit DRAM module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 80 K |
| HYM321000GS-60 | 1M x 32bit DRAM module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 80 K |
| HYM721000GS-60 | 1M x 72bit DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 83 K |
| HYM721000GS-70 | 1M x 72bit DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 83 K |
| HYS64V1000GU-50 | 1M x 64bit EDO-DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 68 K |
| HYS64V1000GU-60 | 1M x 64bit EDO-DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 68 K |
| HYS64V1000GU-70 | 1M x 64bit EDO-DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 68 K |
| HYS72V1000GU-50 | 1M x 72bit EDO-DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 68 K |
| HYS72V1000GU-60 | 1M x 72bit EDO-DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 68 K |
| 1 [2] [3] [4] [5] [6] |
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