| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ASI1001 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| MJ1001 | Medium-power comlementary silicon transistor | Motorola | - | 2 | -55°C | 200°C | 139 K |
| MJ10012 | NPN silicon power darlington transistor | Motorola | - | 2 | -65°C | 200°C | 191 K |
| MJ10015 | NPN silicon power darlington transistor | Motorola | - | 2 | -65°C | 200°C | 217 K |
| MJ10016 | NPN silicon power darlington transistor | Motorola | - | 2 | -65°C | 200°C | 217 K |
| PRN10016N10R0J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N22R0J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| UFT10010 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | M0045 | - | - | - | 222 K |
| UFT10015 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | M0045 | - | - | - | 222 K |
| UPP1001 | PIN Diode | Microsemi-Corporation | POWERMITE | - | - | - | 148 K |
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