| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| D1002UK | 28V, 40W, 1MHz-175MHz single-edded RF | Semelab-Plc- | DA | - | - | - | 41 K |
| KBPC1002 | 10A single-phase silicon bridge rectifier | distributor | KBPC | 4 | -55°C | 125°C | 370 K |
| MJ10020 | 60A NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 211 K |
| MJ10021 | 60A NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 211 K |
| MJ10022 | 40A NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 202 K |
| MJ10023 | 40A NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 202 K |
| MJ10024 | 20A NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 205 K |
| PTF10020 | 125 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20240 | 4 | - | - | 313 K |
| PTF10021 | 30 watts, 1.4-1.6 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20237 | 4 | - | - | 278 K |
| PTH31002 | 30 watts, 1.9-2.0 GHz 50-Ohm power hybrid | Ericsson-Microelectronics | 20237 | 3 | - | - | 206 K |
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