| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416V1004CJ-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416V1004CJ-5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
| KM416V1004CJ-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416V1004CJ-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
| KM416V1004CJ-L5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
| KM416V1004CJ-L6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
| KM416V1004CT-5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
| KM416V1004CT-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
| KM416V1004CT-L5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
| KM416V1004CT-L6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
| [1] [2] [3] [4] [5] 6 [7] |
|---|
