| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ASI1005 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| D1005UK | 28V, 80W, 1MHz-175MHz single-edded RF | Semelab-Plc- | DM | - | - | - | 36 K |
| MMBD1005LT1 | Switching diode | Motorola | - | 3 | -55°C | 150°C | 160 K |
| MS1005 | Schottky Rectifier | Microsemi-Corporation | - | - | - | - | 120 K |
| PR1005 | 1AMP fast recovery rectifier | distributor | - | 2 | -65°C | 150°C | 769 K |
| PTF10052 | 35 watts, 1.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20235 | 3 | - | - | 498 K |
| PTF10053 | 12 watts, 2.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20244 | 3 | - | - | 81 K |
| TSMBJ1005C | Thyristor Surge Suppressor | Microsemi-Corporation | - | - | - | - | 516 K |
| TSMBJ1005C | Thyristor Surge Suppressor | Microsemi-Corporation | - | - | - | - | 516 K |
| UF1005 | 1AMP ultra fast switching rectifier | distributor | - | 2 | -65°C | 150°C | 759 K |
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