| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AMS1009AS | Precision band-gap voltage reference diode | distributor | SOIC | 8 | 0°C | 70°C | 35 K |
| AMS1009BN | Precision band-gap voltage reference diode | distributor | - | 3 | 0°C | 70°C | 35 K |
| AMS1009BS | Precision band-gap voltage reference diode | distributor | SOIC | 8 | 0°C | 70°C | 35 K |
| APT10090BFLL | 1000V, 12A power MOS 7 transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 71 K |
| APT10090BLL | 1000V, 14A power MOS 7 transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 70 K |
| APT10090SFLL | 1000V, 12A power MOS 7 transistor | Advanced-Power-Technology-APT | D3PAK | 3 | -55°C | 150°C | 71 K |
| APT10090SLL | 1000V, 14A power MOS 7 transistor | Advanced-Power-Technology-APT | D3PAK | 3 | -55°C | 150°C | 70 K |
| D1009UK | 28V, 150W, 1MHz-500MHz push-pull RF | Semelab-Plc- | DR | - | - | - | 50 K |
| M5M410092BFP | 3D-RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 128 | 0°C | 70°C | 1 M |
| M5M410092BRF | 3D-RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 128 | 0°C | 70°C | 1 M |
| [1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
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