| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM100DU-24H | 100 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 45 K |
| CM100DY-12H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 47 K |
| CM100DY-24H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 48 K |
| PM100DSA120 | 100 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 62 K |
| QM100DY-24BK | 100A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 102 K |
| QM100DY-24K | 100A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 101 K |
| QM100DY-2HBK | 100A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 102 K |
| QM100DY-2HK | 100A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 101 K |
| RM100DZ-H | 100A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 44 K |
| RM100DZ-M | 100A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 44 K |
| [1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
|---|
