| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 3EZ100D5 | 1 to 3 watt zener regulator diode | Motorola | - | 2 | -65°C | 200°C | 156 K |
| AM27C4096-100DC | 4 megabit (256K x 16-bit ) CMOS EPROM | AMD-Advanced-Micro-Devices | CDIP | 40 | 0°C | 70°C | 165 K |
| AM27C4096-100DI | 4 megabit (256K x 16-bit ) CMOS EPROM | AMD-Advanced-Micro-Devices | CDIP | 40 | -40°C | 85°C | 165 K |
| AM27C4096-100DI | 4 megabit (256K x 16-bit ) CMOS EPROM | AMD-Advanced-Micro-Devices | CDIP | 40 | -40°C | 85°C | 165 K |
| CM100DU-12H | 100 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 51 K |
| MPX2100D | 100 KPA on-chip temperature compensated silicon pressure sensor | Motorola | ISSUE B | 4 | -40°C | 125°C | 194 K |
| MPX2100DP | 100 KPA on-chip temperature compensated silicon pressure sensor | Motorola | ISSUE B | 4 | -40°C | 125°C | 194 K |
| MPX7100D | 100 KRA compensated silicon pressure sensor | Motorola | ISSUE W | 6 | -40°C | 125°C | 193 K |
| MPX7100DP | 100 KRA compensated silicon pressure sensor | Motorola | ISSUE B | 6 | -40°C | 125°C | 193 K |
| NJM2100D | Dual operational amplifier | New-Japan-Radio-Co--Ltd--JRC | DIP | 8 | -40°C | 85°C | 201 K |
| [1] [2] [3] [4] [5] 6 [7] [8] [9] [10] |
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