Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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100FXG13 | Silicon diffused type diode for high speed (fast recovery) rectifier applications | Toshiba | - | 2 | -40°C | 125°C | 116 K |
PLS100F | Programmable logic arrays (16 ? 48 ? 8) | Philips-Semiconductors | FQ | - | - | - | 127 K |
PLS100FB | Programmable logic arrays (16 ? 48 ? 8) | Philips-Semiconductors | FQ | - | - | - | 127 K |
SCANPSC100FMW | Embedded Boundary Scan Controller | distributor | SOIC WIDE | 28 | - | - | 364 K |
STH6N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
STH7NA100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 76 K |
STP3N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 197 K |
STP3NA100FP | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 115 K |
STP4N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
STP4NB100FP | N-CHANNEL 1000V - 4 OHM - 3.8A - TO-220/TO-220FP POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 109 K |
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