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1010n

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CXG1010NPower Amplifier for PHSSony-Semiconductor----218 K
IRF1010NHEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.International-Rectifier-3-55°C175°C211 K
IRF1010NLHEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.International-Rectifier-3-55°C175°C146 K
IRF1010NSHEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.International-RectifierDDPak3-55°C175°C146 K
IRFI1010NHEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 AInternational-Rectifier-3-55°C175°C109 K
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