| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| VTB1012B | Process photodiode. Isc = 1.3 microA, Voc = 420 mV at H = 100 fc, 2850 K. | distributor | - | 2 | -40°C | 110°C | 27 K |
| WEDPNF8M721V-1012BC | 100MHz SDRAM/120ns flash; 3.3V power supply; 8M x 72 synchronous DRAM + 8Mb flash mixed module multi-chip package | distributor | PBGA | 275 | 0°C | 70°C | 1 M |
| WEDPNF8M721V-1012BI | 100MHz SDRAM/120ns flash; 3.3V power supply; 8M x 72 synchronous DRAM + 8Mb flash mixed module multi-chip package | distributor | PBGA | 275 | -40°C | 85°C | 1 M |
| WEDPNF8M721V-1012BM | 100MHz SDRAM/120ns flash; 3.3V power supply; 8M x 72 synchronous DRAM + 8Mb flash mixed module multi-chip package | distributor | PBGA | 275 | -55°C | 125°C | 1 M |
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