| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD1055 | NPN silicon medium power transistor | ROHM | FTR | 3 | - | - | 124 K |
| LT1055 | Precision, High Speed, JFET Input Operational Amplifiers | Linear-Technology | - | - | - | - | 360 K |
| LT1055S8 | Precision, High Speed, JFET Input Operational Amplifiers | Linear-Technology | - | - | - | - | 162 K |
| MXP1055PC-IR | Photoconductive Detectors | Microsemi-Corporation | SEE_FACTORY | - | - | - | 35 K |
| RZ1055 | Avalanche Diode With Built-in Thyristor | Sanken-Electric-Co- | - | - | - | - | 19 K |
| TGA1055-EPU | Ka band 2 watt power amplifier | TriQuint-Semiconductor-Inc- | - | - | - | - | 482 K |
| UPD71055C-10 | 10 MHz parallel interface unit | NEC-Electronics-Inc- | DIP | 40 | -40°C | 85°C | 486 K |
| UPD71055C-8 | 8 MHz parallel interface unit | NEC-Electronics-Inc- | DIP | 40 | -40°C | 85°C | 486 K |
| UPD71055GB-10 | 10 MHz parallel interface unit | NEC-Electronics-Inc- | PQFP | 44 | -40°C | 85°C | 486 K |
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