Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SK1058 | Power general purpose MOSFET | distributor | - | - | - | - | 40 K |
61058-001 | 1-5mA 50V silicon phototransistor: type GS4021 | distributor | - | 3 | -65°C | 125°C | 90 K |
61058-002 | 4-9mA 50V silicon phototransistor: type GS4021 | distributor | - | 3 | -65°C | 125°C | 90 K |
61058-101 | 1-5mA 50V silicon phototransistor: type GS4021 | distributor | - | 3 | -65°C | 125°C | 90 K |
F1058 | 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
LT1058 | Dual and Quad, JFET Input Precision High Speed Op Amps | Linear-Technology | - | - | - | - | 869 K |
LT1058IS | Quad JFET input precision high speed Op. Amp. | Linear-Technology | SOL | 16 | -40°C | 85°C | 175 K |
LT1058S | Dual JFET Input Precision High Speed Op Amp | Linear-Technology | - | - | - | - | 175 K |
LT1058S | Quad JFET input precision high speed Op. Amp. | Linear-Technology | SOL | 16 | 0°C | 70°C | 175 K |
MSC81058 | GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 101 K |
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