| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SK1065 | N-channel junction silicon FET, high-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2057 | 3 | - | - | 107 K |
| 2SK1066 | N-channel junction silicon FET, high-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2058 | 3 | - | - | 210 K |
| 2SK1067 | N-channel MOS silicon FET, FM tuner, VHF-band amp application | SANYO-Electric-Co--Ltd- | 2057 | 3 | - | - | 109 K |
| 2SK1068 | N-channel junction silicon FET, impedance conversion application | SANYO-Electric-Co--Ltd- | 2058 | 3 | - | - | 80 K |
| 2SK1069 | N-channel junction silicon FET, low-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2058 | 3 | - | - | 84 K |
| CXG1068N | SP4T Antenna Switch for GSM Dual band | Sony-Semiconductor | - | - | - | - | 93 K |
| DM-106B | Magnetoresistance Element | Sony-Semiconductor | - | - | - | - | 101 K |
| INA106KP | Precision Fixed-Gain Differential Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 175 K |
| INA106U | Precision Fixed-Gain Differential Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 175 K |
| ISO106B | Low Cost, High Voltage, Wide Bandwidth Standard Hermetic DIP Signal Isolation Buffer Amplifiers | Burr-Brown-Corporation | 40 | - | - | - | 230 K |
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