| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD1063 | NPN epitaxial planar silicon transistor, 50V/7A, switching application | SANYO-Electric-Co--Ltd- | 2022 | 3 | - | - | 93 K |
| 2SD1063 | NPN planar silicon transistor. PSW/D/DDC. Complementary to 2SB827 | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 48 K |
| CXG1063TN | High Power 2 x 4 Antenna Switch MMIC | Sony-Semiconductor | - | - | - | - | 67 K |
| F1063 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 32 K |
| HGLM-1063 | Fibre channel gbaud optical link module | distributor | - | 20 | 10°C | 50°C | 203 K |
| INA-51063-BLK | 2.5GHz low noise silicon MMIC amplifier | distributor | - | 6 | - | - | 69 K |
| INA-51063-TR1 | 2.5GHz low noise silicon MMIC amplifier | distributor | - | 6 | - | - | 69 K |
| LTC1063 | DC Accurate, Clock-Tunable 5th Order Butterworth Lowpass Filter | Linear-Technology | - | - | - | - | 317 K |
| R6110630XXYZ | 600V, 300A general purpose single diode | distributor | - | - | - | - | 686 K |
| R6110630XXYZ | 600V, 300A general purpose single diode | distributor | - | - | - | - | 686 K |
| VTE1063 | GaAlAs infrared emitting diode. Irradiance(typ) 5.0 mW/cm2 at distance 36 mm, diameter 6.4 mm. | distributor | - | 2 | -55°C | 125°C | 32 K |
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