| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXFN106N20 | 200V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 112 K |
| TIC106N | Silicon controlled rectifier | Power-Innovations | - | - | - | - | 165 K |
| TN0106N3 | 60V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 27 K |
| TN2106N3 | 60V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 32 K |
| TN2106ND | 60V N-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 32 K |
| VN0106N3 | 60V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 476 K |
| VN2106N3 | 60V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 457 K |
| VP0106N3 | 60V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 46 K |
| VP2106N3 | 60V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 456 K |
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