| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1072 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| LT1072CJ8 | 1.25A high effciency switching regulator | Linear-Technology | CERDIP | 8 | 0°C | 100°C | -- |
| LT1072CK | 1.25A high effciency switching regulator | Linear-Technology | - | 4 | 0°C | 100°C | -- |
| LT1072CN8 | 1.25A high effciency switching regulator | Linear-Technology | PDIP | 8 | 0°C | 100°C | -- |
| LT1072CS | 1.25A high effciency switching regulator | Linear-Technology | SOL | 16 | 0°C | 100°C | -- |
| LT1072CS8 | 1.25A high effciency switching regulator | Linear-Technology | SOIC | 8 | 0°C | 100°C | -- |
| LT1072CT | 1.25A high effciency switching regulator | Linear-Technology | - | 5 | 0°C | 100°C | -- |
| LT1072HVCT | 1.25A high effciency switching regulator | Linear-Technology | - | 5 | 0°C | 100°C | -- |
| LT1072MJ8 | 1.25A high effciency switching regulator | Linear-Technology | CERDIP | 8 | -55°C | 150°C | -- |
| TH71072 | 315/433 MHz ASK transmitter/LO source | distributor | SOIC | 8 | -40°C | 85°C | 252 K |
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