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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ISPLSI81080V-125LB492125 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI81080V-60LB49260 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI81080V-90LB49290 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI81080V-90LB49290 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
MA4M1080100 V, MNS microwave chip capacitorM-A-COM---manufacturer-of-RF---55°C200°C40 K
SD1080CS-T3Reverse voltage: 80.00V; 10A DPAK surface mount schottky barrier rectifierdistributor-2-50°C125°C46 K
SD1080S-T3Reverse voltage: 80.00V; 10A DPAK surface mount schottky barrier rectifierdistributorDPAK3-50°C125°C44 K
SD1080S-T3Reverse voltage: 80.00V; 10A DPAK surface mount schottky barrier rectifierdistributorDPAK3-50°C125°C44 K
SD1080YS-T3Reverse voltage: 80.00V; 10A DPAK surface mount schottky barrier rectifierdistributorDPAK3-50°C125°C46 K
SD1080YS-T3Reverse voltage: 80.00V; 10A DPAK surface mount schottky barrier rectifierdistributorDPAK3-50°C125°C46 K
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