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108R

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AT-108RTRFrequency 0.5-3 GHz, 40dB, voltage variable absorptive attenuatorM-A-COM---manufacturer-of-RF-8-40°C85°C45 K
BF1108RSilicon RF switchesPhilips-SemiconductorsSOT143---61 K
M5M5V108RV-10HI1048576-bit (131072-word by 8-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C87 K
M5M5V108RV-10XI1048576-bit (131072-word by 8-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C87 K
M5M5V108RV-70HI1048576-bit (131072-word by 8-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C87 K
M5M5V108RV-70XI1048576-bit (131072-word by 8-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C87 K
PG108RGlass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 800 A. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.0 A.distributor-2-55°C150°C57 K
PG108RSGlass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 800 A. Max average forward rectified current 9.5mm lead length at 55degC 1.0 A.distributor-2-55°C150°C57 K
PS108RFast switching plastic diode. Max recurrent peak reverse voltage 800 A. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.0 A.distributor-2-55°C150°C59 K
PS108RSFast switching plastic diode. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.0 A.distributor-2-55°C150°C59 K
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