Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AT-109RTR | Frequency 0.5-2 GHz, 35dB, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | - | 8 | -40°C | 85°C | 143 K |
BF1109R | N-channel dual-gate MOS-FETs | Philips-Semiconductors | SOT143 | - | - | - | 145 K |
DC-109R | 1.8watt DC-DC converter, 500Vdc isolation, in=12V, out=9V | distributor | DIP | 23 | -25°C | 71°C | 96 K |
FJV3109R | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 52 K |
FJV4109R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 52 K |
FJV4109R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 52 K |
SG109R | Positive Fixed Linear Voltage Regulators | Microsemi-Corporation | - | - | - | - | 50 K |
SG109R/883B | Positive Fixed Linear Voltage Regulators | Microsemi-Corporation | - | - | - | - | 50 K |
SWD-109RTR | Single/quad driver for GaAs FET switche and attenuator | M-A-COM---manufacturer-of-RF | SO | 8 | -40°C | 85°C | 317 K |
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