| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EN27LV010B120P | 1Megabit low voltage EPROM (128K x 8). Speed 120ns. 2.7V to 3.6V Vcc tolerance. | distributor | PDIP | 32 | 0°C | 70°C | 83 K |
| M27C256B-10B1 | 256 Kbit (32Kb x 8) EPROM, 5V, 100ns | SGS-Thomson-Microelectronics | PDIP | 28 | 0°C | 70°C | 107 K |
| M27C512-10B1 | 512 Kbit (64Kb x 8) EPROM, 5V, 100ns | SGS-Thomson-Microelectronics | PDIP | 28 | 0°C | 70°C | 114 K |
| M74HC10B1R | TRIPLE 3-INPUT NAND GATE | SGS-Thomson-Microelectronics | - | - | - | - | 174 K |
| M74HCT10B1R | TRIPLE 3-INPUT NAND GATE | SGS-Thomson-Microelectronics | - | - | - | - | 173 K |
| SZ10B1 | 110 V, 1 W, surface mount silicon zener diode | distributor | SMA | 2 | -55°C | 150°C | 28 K |
| T10B120B | T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 110V,max. Ir = 50uA @ Vr = 120V,max, Bulk (500pcs). | distributor | - | 2 | -40°C | 150°C | 70 K |
| T10B120T | T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 110V,max. Ir = 50uA @ Vr = 120V,max, Tape and reeled (1500pcs). | distributor | - | 2 | -40°C | 150°C | 70 K |
| T10B140B | T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 120V,max. Ir = 50uA @ Vr = 140V,max, Bulk (500pcs). | distributor | - | 2 | -40°C | 150°C | 70 K |
| T10B140T | T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 120V,max. Ir = 50uA @ Vr = 140V,max, Tape and reeled (1500pcs). | distributor | - | 2 | -40°C | 150°C | 70 K |
| [1] [2] 3 [4] |
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