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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ACS10MSRadiation Hardened Triple Three-Input NAND GateIntersil-Corporation----106 K
ACS10MSRadiation Hardened Triple Three-Input NAND GateIntersil-Corporation----106 K
ACTS10MSRadiation Hardened Triple Three-Input NAND GateIntersil-Corporation----112 K
HCS10MSRadiation Hardened Triple 3-Input NAND GateIntersil-Corporation----181 K
HCTS10MSRadiation Hardened Triple 3-Input NAND GateIntersil-Corporation----147 K
HCTS10MSRadiation Hardened Triple 3-Input NAND GateIntersil-Corporation----147 K
M48Z35AV-10MH1256 KBIT (32KB X 8) ZEROPOWER SRAMSGS-Thomson-Microelectronics----135 K
MC10H210ML1Dual 3-Input 3-Output OR GateON-Semiconductor----93 K
ST95010M14K/2K/1K BITS SERIAL SPI EEPROM WITH POSITIVE CLOCK STROBESGS-Thomson-Microelectronics----110 K
ST95010M64K/2K/1K BITS SERIAL SPI EEPROM WITH POSITIVE CLOCK STROBESGS-Thomson-Microelectronics----110 K
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