Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ACS10MS | Radiation Hardened Triple Three-Input NAND Gate | Intersil-Corporation | - | - | - | - | 106 K |
ACS10MS | Radiation Hardened Triple Three-Input NAND Gate | Intersil-Corporation | - | - | - | - | 106 K |
ACTS10MS | Radiation Hardened Triple Three-Input NAND Gate | Intersil-Corporation | - | - | - | - | 112 K |
HCS10MS | Radiation Hardened Triple 3-Input NAND Gate | Intersil-Corporation | - | - | - | - | 181 K |
HCTS10MS | Radiation Hardened Triple 3-Input NAND Gate | Intersil-Corporation | - | - | - | - | 147 K |
HCTS10MS | Radiation Hardened Triple 3-Input NAND Gate | Intersil-Corporation | - | - | - | - | 147 K |
M48Z35AV-10MH1 | 256 KBIT (32KB X 8) ZEROPOWER SRAM | SGS-Thomson-Microelectronics | - | - | - | - | 135 K |
MC10H210ML1 | Dual 3-Input 3-Output OR Gate | ON-Semiconductor | - | - | - | - | 93 K |
ST95010M1 | 4K/2K/1K BITS SERIAL SPI EEPROM WITH POSITIVE CLOCK STROBE | SGS-Thomson-Microelectronics | - | - | - | - | 110 K |
ST95010M6 | 4K/2K/1K BITS SERIAL SPI EEPROM WITH POSITIVE CLOCK STROBE | SGS-Thomson-Microelectronics | - | - | - | - | 110 K |
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