| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ACS10MS | Radiation Hardened Triple Three-Input NAND Gate | Intersil-Corporation | - | - | - | - | 106 K |
| ACS10MS | Radiation Hardened Triple Three-Input NAND Gate | Intersil-Corporation | - | - | - | - | 106 K |
| ACTS10MS | Radiation Hardened Triple Three-Input NAND Gate | Intersil-Corporation | - | - | - | - | 112 K |
| HCS10MS | Radiation Hardened Triple 3-Input NAND Gate | Intersil-Corporation | - | - | - | - | 181 K |
| HCTS10MS | Radiation Hardened Triple 3-Input NAND Gate | Intersil-Corporation | - | - | - | - | 147 K |
| HCTS10MS | Radiation Hardened Triple 3-Input NAND Gate | Intersil-Corporation | - | - | - | - | 147 K |
| ISD4004-10MS | 10 minutes single-chip voice record/playback device | Information-Storage-Devices-Inc- | SOIC | 28 | 0°C | 70°C | 1 M |
| ISD4004-10MSI | 10 minutes single-chip voice record/playback device | Information-Storage-Devices-Inc- | SOIC | 28 | -40°C | 85°C | 1 M |
| SD103N20S10MSC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| SD103N25S10MSC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| 1 [2] [3] [4] [5] [6] |
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